Investigation of Vapor HF Sacrificial Etching Characteristics Through Submicron Release Holes for Wafer-Level Vacuum Packaging Based on Silicon Migration Seal

Vapor hydrogen fluoride (vHF) sacrificial SiO $_{2}$ etching is a crucial process for wafer-level packaging based on silicon migration seal (SMS) technology. In this study, by using test samples with several kinds of patterns and structures, the characteristics vHF through release holes diameter 0.5 notation="LaTeX">$\mu $ m were investigated. The results showed that through-hole etch rate had some dependence number distribution holes, distance from dimension sealed cavity, which much different normal etching. stiction problem in such special case was also tested releasing cantilever structures length. They more likely to bend during than This work reveals role water as both by-product catalyst study provide important design guidelines SMS-based MEMS well other similar vacuum technology improve understanding mechanisms. 2023-0065